Study of the Structural, Optical and Electrical Properties of In2S3 Thin Films Prepared by Thermal Evaporation Method

Authors

In2S3 thin films were prepared on glass substrates by the use of the vacuum

thermal evaporation technique, and then thermally annealed in free air

atmosphere at 350 °C for 2h. The structural, optical and the electrical properties

of the films were studied as a function of the annealing temperature and the film

thickness. X-ray diffraction analysis shows amorphous nature of thin film and the

powder was polycrystalline structure. The films show good homogeneity which

was obtained from (UV-Vis) spectrophotometer .The study objective: is Preparing

thin films of Indium Sulfide by vacuum thermal evaporation method, studying

their Structural, Optical and Electrical properties, and demonstrating the

possibility of using them in electronic applications. Conclusion: The structural,

optical and electrical tests of the prepared thin film showed agreement with the

literature's, with a clear distinction of the effect of annealing on the obtained

results represented by an increase in the crystallinity of the prepared films, in

addition to the effect of the optical properties because the annealing temperature

leads to the loss of part of the sulfur present in the thin films.