Study of the Structural, Optical and Electrical Properties of In2S3 Thin Films Prepared by Thermal Evaporation Method

Abstract

In2S3 thin films were prepared on glass substrates by the use of the vacuum thermal evaporation technique, and then thermally annealed in free air atmosphere at 350 °C for 2h. The structural, optical and the electrical properties of the films were studied as a function of the annealing temperature and the film thickness. X-ray diffraction analysis shows amorphous nature of thin film and the powder was polycrystalline structure. The films show good homogeneity which was obtained from (UV-Vis) spectrophotometer .The study objective: is Preparing thin films of Indium Sulfide by vacuum thermal evaporation method, studying their Structural, Optical and Electrical properties, and demonstrating the possibility of using them in electronic applications. Conclusion: The structural, optical and electrical tests of the prepared thin film showed agreement with the literature's, with a clear distinction of the effect of annealing on the obtained results represented by an increase in the crystallinity of the prepared films, in addition to the effect of the optical properties because the annealing temperature leads to the loss of part of the sulfur present in the thin films.